Infineon BCR108E6327HTSA1

Bipolar junction transistor, NPN, 100 mA, 50 V, SMD, SOT-23, BCR108E6327
NRND

Price and Stock

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Technical Specifications

Physical
Case/PackageSOT
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)50 V
Current Rating100 mA
Element ConfigurationSingle
hFE Min70
Input Resistance2.2 kΩ
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-65 °C
Number of Elements1
Package Quantity3000
PackagingTape & Reel
PolarityNPN
Power Dissipation200 mW
Schedule B8541210080
Transition Frequency170 MHz
Voltage Rating (DC)50 V
Dimensions
Height1.1 mm

Documents

Download datasheets and manufacturer documentation for Infineon BCR108E6327HTSA1.

Upverter
Datasheet11 pages12 years ago
iiiC
Datasheet12 pages16 years ago

Inventory History

3 month trend:
+12.22%

Supply Chain

Lifecycle StatusNRND (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon BCR108E6327HTSA1.

Related Parts

Descriptions

Descriptions of Infineon BCR108E6327HTSA1 provided by its distributors.

Bipolar junction transistor, NPN, 100 mA, 50 V, SMD, SOT-23, BCR108E6327
Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin SOT-23 T/R
BCR108 Series NPN 50 V 100 mA SMT Silicon Digital Transistor - SOT-23-3
Bipolar Transistors - Pre-Biased AF TRANS DIGITAL BJT NPN 50V 100MA
NPN SILICON DIGITAL TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
NPN Silicon Digital Transistor, SOT23, RoHS
Infineon SCT
Brt Transistor, 50V, 2.2K/47K, Sot-23-3; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:2.2Kohm; Base-Emitter Resistor R2:47Kohm; Resistor Ratio, R1/R2:0.047(Ratio); Rf Rohs Compliant: Yes |Infineon BCR108E6327HTSA1
NPN Silicon Digital Transistor | Summary of Features: Switching circuit, inverter, interface circuit, driver circuit; Built in bias resistor (R1=2.2 k, R2=47 k); BCR108S: Two internally isolated transistors with good matching in one multichip package; BCR108S: For orientation in reel see package information below; Pb-free (RoHS compliant) package; Qualified according AEC Q101
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / DC Current Gain (hFE) = 70 / Power Dissipation (Pd) mW = 200 / Typical Input Resistor kOhm = 2.2 / Collector-Base Voltage (Vcbo) V = 50 / Collector-Emitter Voltage (Vceo) V = 50 / Operating Temperature Max. °C = 150 / Operating Temperature Min. °C = -65 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 300 / Operating Frequency MHz = 170

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IR/INFINEON
  • IFX
  • INFIENON
  • IFT
  • INFINEON/SIEMENS
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • BCR 108 E6327
  • BCR108
  • BCR108 E 6327
  • BCR108 E6327
  • BCR108-E6327
  • BCR108E6327
  • SP000010736

Technical Specifications

Physical
Case/PackageSOT
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)50 V
Current Rating100 mA
Element ConfigurationSingle
hFE Min70
Input Resistance2.2 kΩ
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-65 °C
Number of Elements1
Package Quantity3000
PackagingTape & Reel
PolarityNPN
Power Dissipation200 mW
Schedule B8541210080
Transition Frequency170 MHz
Voltage Rating (DC)50 V
Dimensions
Height1.1 mm

Documents

Download datasheets and manufacturer documentation for Infineon BCR108E6327HTSA1.

Upverter
Datasheet11 pages12 years ago
iiiC
Datasheet12 pages16 years ago

Compliance

Environmental Classification
Halogen FreeNot Halogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements