STMicroelectronics BCP56-16

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOT-223
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min40
Max Breakdown Voltage80 V
Max Collector Current1 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Manufacturer Package IdentifierSOT-223-P008
Min Operating Temperature-65 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation1.6 W
Schedule B8541290080
Dimensions
Height1.8 mm
Length6.7 mm
Width3.7 mm

Documents

Download datasheets and manufacturer documentation for STMicroelectronics BCP56-16.

Components Direct
Datasheet9 pages18 years ago
TME
Datasheet9 pages18 years ago
Factory Futures
Datasheet9 pages18 years ago

Inventory History

3 month trend:
+6.35%

Alternate Parts

Price @ 1000
$ 0.21
$ 0.138
$ 0.138
Stock
5,092,683
3,386,391
3,386,391
Authorized Distributors
11
11
11
Mount
Surface Mount
-
-
Case/Package
SOT-223
SOT-223-4
SOT-223-4
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
80 V
80 V
80 V
Max Collector Current
1 A
1 A
1 A
Transition Frequency
-
130 MHz
130 MHz
Collector Emitter Saturation Voltage
500 mV
500 mV
500 mV
hFE Min
40
25
25
Power Dissipation
1.6 W
1.5 W
1.5 W

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for STMicroelectronics BCP56-16.

Related Parts

Descriptions

Descriptions of STMicroelectronics BCP56-16 provided by its distributors.

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
Trans GP BJT NPN 80V 1A 1600mW 4-Pin(3+Tab) SOT-223 T/R
BCP56-16,Transistor,BJT NPN 80V 1A
Power Bipolar, NPN, 2V, 50mA, SOT-223, Tape and Reel
STMicroelectronics SCT
Bipolar Transistors - BJT NPN Medium Voltage
TRANSISTOR, NPN, 100V, 1A, SOT-223; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 1.6W; DC Collector Current: 1A; DC Current Gain hFE: 25hFE; Transistor Ca
Trans, Npn, 80V, 1A, 150Deg C, 1.6W; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:1.6W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:- Rohs Compliant: Yes |Stmicroelectronics BCP56-16
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 1 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 250 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 1.6 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 500

Manufacturer Aliases

STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics

Part Number Aliases

This part may be known by these alternate part numbers:

  • BCP56-16.

Technical Specifications

Physical
Case/PackageSOT-223
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min40
Max Breakdown Voltage80 V
Max Collector Current1 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Manufacturer Package IdentifierSOT-223-P008
Min Operating Temperature-65 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation1.6 W
Schedule B8541290080
Dimensions
Height1.8 mm
Length6.7 mm
Width3.7 mm

Documents

Download datasheets and manufacturer documentation for STMicroelectronics BCP56-16.

Components Direct
Datasheet9 pages18 years ago
TME
Datasheet9 pages18 years ago
Factory Futures
Datasheet9 pages18 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant