NXP Semiconductors BC856BW
Technical Specifications
Physical
Case/PackageSOT-323
MountSurface Mount
Number of Pins3
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)-80 V
Collector Emitter Breakdown Voltage-65 V
Collector Emitter Saturation Voltage-250 mV
Collector Emitter Voltage (VCEO)-65 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Gain Bandwidth Product100 MHz
hFE Min220
Max Collector Current100 mA
Max Frequency100 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityPNP
Power Dissipation200 mW
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for NXP Semiconductors BC856BW.
Descriptions
Descriptions of NXP Semiconductors BC856BW provided by its distributors.
Trans GP BJT PNP 65V 0.1A Automotive 3-Pin SC-70 T/R
SOT-323(SC-70) Bipolar Transistors - BJT ROHS
100 mA 65 V PNP Si SMALL SIGNAL TRANSISTOR
New and Oringinal with 360 days guarantee
French Electronic Distributor since 1988
Manufacturer Aliases
NXP Semiconductors has several brands around the world that distributors may use as alternate names. NXP Semiconductors may also be known as the following names:
- NXP
- PHILIPS
- PHIL
- PHI
- PHILLIPS
- NXP USA Inc
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- Philips Semiconductor
- NXP/PHILIPS
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- PHILIPS ECG
- NXP / Freescale
- PHILL
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-323
MountSurface Mount
Number of Pins3
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)-80 V
Collector Emitter Breakdown Voltage-65 V
Collector Emitter Saturation Voltage-250 mV
Collector Emitter Voltage (VCEO)-65 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Gain Bandwidth Product100 MHz
hFE Min220
Max Collector Current100 mA
Max Frequency100 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityPNP
Power Dissipation200 mW
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm