Nexperia BC856B.

65V 200mW 220@2mA, 5V 100mA PNP SOT-23-3 Bipolar Transistors - BJT ROHS
Datasheet

Price and Stock

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Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)-80 V
Collector Emitter Breakdown Voltage-65 V
Collector Emitter Saturation Voltage-75 mV
Collector Emitter Voltage (VCEO)-65 V
Current100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
hFE Min220
Max Collector Current-100 mA
Max Frequency100 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityPNP
Power Dissipation250 mW
TerminationSMD/SMT
Transition Frequency100 MHz
Voltage65 V
Dimensions
Height1 mm
Length3 mm
Width1.4 mm

Documents

Download datasheets and manufacturer documentation for Nexperia BC856B..

Farnell
Datasheet10 pages14 years ago
Datasheet53 pages15 years ago
element14
Datasheet10 pages22 years ago
Upverter
Technical Drawing5 pages5 years ago
Datasheet11 pages14 years ago

Engineering Resources

View Evaluation kits and Reference designs for Nexperia BC856B..

Related Parts

Descriptions

Descriptions of Nexperia BC856B. provided by its distributors.

65V 200mW 220@2mA,5V 100mA PNP SOT-23-3 Bipolar Transistors - BJT ROHS
65 V, 100 mA PNP general-purpose transistor Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Trans GP BJT PNP 65V 0.1A Automotive 3-Pin TO-236AB
Transistor PNP BC856/BC856B PHILIPS milliampere=100 V=65 SOt23
Transistor; Transistor Type:Bipolar; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:65V; Continuous Collector Current, Ic:100mA; Collector Emitter Saturation Voltage, Vce(sat):0.25V; Power Dissipation, Pd:0.25mW ;RoHS Compliant: Yes
TRANSISTOR, PNP, SOT-23; Transistor Type:Bipolar; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:65V; Current Ic Continuous a Max:100mA; Voltage, Vce Sat Max:-300mV; Power Dissipation:250mW; Min Hfe:220; ft, Typ:100MHz; Case Style:SOT-23; Termination Type:SMD; Operating Temperature Range:-65°C to +150°C; Current Ic Max:100mA; Current Ic hFE:2mA; Device Marking:BC856B; No. of Pins:3; Power, Ptot:250mW; Power, Ptot per Device:250mW; SMD Marking:3B; Temperature, Full Power Rating:25°C; Transistors, No. of:2; Voltage, Vcbo:80V; Width, Tape:8mm; ft, Min:100MHz
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) mA = -100 / Collector-Emitter Voltage (Vceo) V = -65 / DC Current Gain (hFE) = 220 / Collector-Base Voltage (Vcbo) V = -80 / Emitter-Base Voltage (Vebo) V = -5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 250 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = -300 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = -700 / Reflow Temperature Max. °C = 260

Manufacturer Aliases

Nexperia has several brands around the world that distributors may use as alternate names. Nexperia may also be known as the following names:

  • Nexperia USA Inc
  • NEXPER
  • Nexperia BV
  • NEXP
  • NXP/NEXPERIA
  • Nexperia USA
  • NEXPERIA / NXP
  • Nexperia Inc
  • Nexperia/NXP Semiconductors
  • Nexperi
  • NEXPERIA/NXP SEMICONDUCTOR
  • Nexperia Semiconductors Taiwan Ltd
  • NEXPERIA/PHILIPS
  • NEX-NXP

Part Number Aliases

This part may be known by these alternate part numbers:

  • BC 856 B
  • BC 856B
  • BC-856-B
  • BC-856B
  • BC856 B
  • BC856-B
  • BC856B

Technical Specifications

Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)-80 V
Collector Emitter Breakdown Voltage-65 V
Collector Emitter Saturation Voltage-75 mV
Collector Emitter Voltage (VCEO)-65 V
Current100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
hFE Min220
Max Collector Current-100 mA
Max Frequency100 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityPNP
Power Dissipation250 mW
TerminationSMD/SMT
Transition Frequency100 MHz
Voltage65 V
Dimensions
Height1 mm
Length3 mm
Width1.4 mm

Documents

Download datasheets and manufacturer documentation for Nexperia BC856B..

Farnell
Datasheet10 pages14 years ago
Datasheet53 pages15 years ago
element14
Datasheet10 pages22 years ago
Upverter
Technical Drawing5 pages5 years ago
Datasheet11 pages14 years ago

Compliance

Environmental Classification
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page11 years ago
Reach Statement3 pages11 years ago