NXP Semiconductors BC847BW
Technical Specifications
Physical
Case/PackageSOT-323
Number of Pins3
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)45 V
Emitter Base Voltage (VEBO)6 V
hFE Min110
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation200 mW
Transition Frequency100 MHz
Dimensions
Height1.1 mm
Inventory History
3 month trend: -7.33%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for NXP Semiconductors BC847BW.
Upverter
Farnell
Engineering Resources
View Evaluation kits and Reference designs for NXP Semiconductors BC847BW.
Related Parts
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MMBT Series 40 V 600 mA SMT NPN Silicon Switching Transistor - SOT-323
Descriptions
Descriptions of NXP Semiconductors BC847BW provided by its distributors.
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 45V 0.1A 200mW Automotive 3-Pin SC-70
45V 200mW 200@2mA,5V 100mA SOT-323(SC-70) Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, 45V, 0.1A, SOT323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:200; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-323; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 290 / Collector-Base Voltage (Vcbo) V = 50 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 200 / Package Type = SOT-323 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 400 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900 / Reflow Temperature Max. °C = 260
Manufacturer Aliases
NXP Semiconductors has several brands around the world that distributors may use as alternate names. NXP Semiconductors may also be known as the following names:
- NXP
- PHILIPS
- PHIL
- PHI
- PHILLIPS
- NXP USA Inc
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- Philips Semiconductor
- NXP/PHILIPS
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- PHILIPS ECG
- NXP / Freescale
- PHILL
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Inventory History
3 month trend: -7.33%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-323
Number of Pins3
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)45 V
Emitter Base Voltage (VEBO)6 V
hFE Min110
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation200 mW
Transition Frequency100 MHz
Dimensions
Height1.1 mm
Documents
Download datasheets and manufacturer documentation for NXP Semiconductors BC847BW.
Upverter
Farnell