onsemi BC847BDW1T1G
Production
Technical Specifications
Physical
Case/PackageSOT-363-6
Contact PlatingTin
Number of Pins6
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)45 V
Current Rating100 mA
Element ConfigurationDual
Emitter Base Voltage (VEBO)6 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min200
Max Breakdown Voltage45 V
Max Collector Current100 mA
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation380 mW
Min Operating Temperature-55 °C
Number of Elements2
PackagingTape and Reel
PolarityNPN
Power Dissipation380 mW
Schedule B8541210080
Transition Frequency100 MHz
Voltage Rating (DC)45 V
Dimensions
Height900 µm
Length2 mm
Width1.25 mm
Inventory History
3 month trend: +11.72%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for onsemi BC847BDW1T1G.
element14 APAC
TME
iiiC
Jameco
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.039
$ 0.036
Stock
14,198,516
3,401,676
Authorized Distributors
11
12
Mount
-
-
Case/Package
SOT-363-6
SOT-363-6
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
45 V
45 V
Max Collector Current
100 mA
100 mA
Transition Frequency
100 MHz
100 MHz
Collector Emitter Saturation Voltage
600 mV
600 mV
hFE Min
200
200
Power Dissipation
380 mW
380 mW
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi BC847BDW1T1G.
Related Parts
onsemi BC847BPDW1T3G
100 mA 45 V, Co-packaged NPN and PNP Bipolar Junction Transistor
onsemi BC847BPDW1T1G
Trans GP BJT NPN/PNP 45V 0.1A 380mW Automotive 6-Pin SOT-363 T/R
onsemi BC847CDW1T1G
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon
Descriptions
Descriptions of onsemi BC847BDW1T1G provided by its distributors.
ON Semi BC847BDW1T1G Dual NPN Bipolar Transistor; 0.1 A; 45 V; 6-Pin SC-88
NPN DUAL GENERAL PURPOSE TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon
BC Series 45 V 100 mA SMT NPN Silicon Dual General Purpose Transistor - SOT-363
45V 380mW 200@2mA,5V 100mA 2 NPN SOT-323-6 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 45V 0.1A Automotive; BC847BDW1T3G BC847BDW1T1G
100 mA 45 V 2 CHANNEL NPN Si SMALL SIGNAL TRANSISTOR
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications.
TRANSISTOR, NPN, 45V, 100MA, SOT-363-6; Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 45V; Power Dissipation Pd: 380mW; DC Collector Current: 100mA; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: BCxxx Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Transition Frequency ft: 100MHz
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +11.72%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOT-363-6
Contact PlatingTin
Number of Pins6
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)45 V
Current Rating100 mA
Element ConfigurationDual
Emitter Base Voltage (VEBO)6 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min200
Max Breakdown Voltage45 V
Max Collector Current100 mA
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation380 mW
Min Operating Temperature-55 °C
Number of Elements2
PackagingTape and Reel
PolarityNPN
Power Dissipation380 mW
Schedule B8541210080
Transition Frequency100 MHz
Voltage Rating (DC)45 V
Dimensions
Height900 µm
Length2 mm
Width1.25 mm
Documents
Download datasheets and manufacturer documentation for onsemi BC847BDW1T1G.
element14 APAC
TME
iiiC
Jameco
Compliance
Environmental Classification
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements