NXP Semiconductors BC847B

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
Datasheet

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
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Technical Specifications

Physical
Case/PackageSOT-23
Number of Pins3
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage90 mV
Collector Emitter Voltage (VCEO)45 V
Current200 mA
Emitter Base Voltage (VEBO)6 V
Gain Bandwidth Product100 MHz
hFE Min200
Max Collector Current200 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation250 mW
TerminationSMD/SMT
Transition Frequency100 MHz
Voltage45 V
Dimensions
Height1.1 mm

Documents

Download datasheets and manufacturer documentation for NXP Semiconductors BC847B.

element14 APAC
Datasheet18 pages11 years ago
Upverter
Technical Drawing5 pages5 years ago
Datasheet16 pages6 years ago
Farnell
Datasheet15 pages15 years ago

Inventory History

3 month trend:
-75.41%

Engineering Resources

View Evaluation kits and Reference designs for NXP Semiconductors BC847B.

Descriptions

Descriptions of NXP Semiconductors BC847B provided by its distributors.

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
Transistor NPN 0,1A/45V 0,25W SOT23
Trans GP BJT NPN 45V 0.1A Automotive 3-Pin TO-236AB T/R
Transistor NPN BC847B PHILIPS RoHS miliampere=200 V=45 SOt23
Halfin
TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
Transistor: NPN, bipolar, 45V,
TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:290; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:200mV; Continuous Collector Current Ic Max:200mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Device Marking:BC847B; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:300MHz; Hfe Min:200; No. of Transistors:1; Noise Factor Max:10dB; Package / Case:SOT-23; Power Dissipation Pd:250mW; Power Dissipation Ptot Max:200mW; SMD Marking:1F; Termination Type:SMD; Voltage Vcbo:50V
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 290 / Collector-Base Voltage (Vcbo) V = 50 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 250 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 400 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900 / Reflow Temperature Max. °C = 260

Manufacturer Aliases

NXP Semiconductors has several brands around the world that distributors may use as alternate names. NXP Semiconductors may also be known as the following names:

  • NXP
  • PHILIPS
  • PHIL
  • PHI
  • PHILLIPS
  • NXP USA Inc
  • NXP SEMI
  • NXP SEMICONDUCTOR
  • PHILIPS/NXP
  • PHILIPS SEMICONDUCTORS
  • PHILIP
  • Philips Semiconductor
  • NXP/PHILIPS
  • PHILPS
  • PHILIPS COMPONENTS
  • PHILIPS SEMI
  • PHL
  • PHLIPS
  • NXP Semicon
  • PHILIPS ECG
  • NXP / Freescale
  • PHILL
  • Philips Semiconducto
  • PHILLIP
  • PHILI
  • Philips Semiconductors
  • NXP Semiconductors NV
  • NXP

Part Number Aliases

This part may be known by these alternate part numbers:

  • BC 847 B
  • BC-847-B
  • BC847-B
  • BC847/B
  • BC847B.

Technical Specifications

Physical
Case/PackageSOT-23
Number of Pins3
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage90 mV
Collector Emitter Voltage (VCEO)45 V
Current200 mA
Emitter Base Voltage (VEBO)6 V
Gain Bandwidth Product100 MHz
hFE Min200
Max Collector Current200 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation250 mW
TerminationSMD/SMT
Transition Frequency100 MHz
Voltage45 V
Dimensions
Height1.1 mm

Documents

Download datasheets and manufacturer documentation for NXP Semiconductors BC847B.

element14 APAC
Datasheet18 pages11 years ago
Upverter
Technical Drawing5 pages5 years ago
Datasheet16 pages6 years ago
Farnell
Datasheet15 pages15 years ago

Compliance

Environmental Classification
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page11 years ago
Reach Statement3 pages11 years ago