NXP Semiconductors BC817
Technical Specifications
Physical
Case/PackageSOT-23
Number of Pins3
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage700 mV
Collector Emitter Voltage (VCEO)45 V
Current500 mA
Emitter Base Voltage (VEBO)5 V
Gain Bandwidth Product100 MHz
hFE Min100
Max Collector Current500 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation250 mW
TerminationSMD/SMT
Transition Frequency100 MHz
Voltage45 V
Dimensions
Height1.1 mm
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for NXP Semiconductors BC817.
Related Parts
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BCW71 Series 45 V CE Breakdown 0.5 A NPN General Purpose Transistor - SOT-23
Descriptions
Descriptions of NXP Semiconductors BC817 provided by its distributors.
TRANS 2NPN 45V 0.5A 6TSOP / Trans GP BJT NPN 45V 0.5A 345mW Automotive 3-Pin SOT-23
General Purpose Transistor, SOT-23, NPN, 45V
45 V, 500 MA NPN GENERAL-PURPOSE TRANSISTOR Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:45V; Continuous Collector Current, Ic:500mA; Collector Emitter Saturation Voltage, Vce(sat):0.700V; Power Dissipation, Pd:0.25mW ;RoHS Compliant: Yes
TRANSISTOR, NPN, SOT-23, 45V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:500mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:700mV; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:500mA; Current Ic hFE:100mA; Device Marking:BC817; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:100MHz; Hfe Min:100; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:250mW; Power Dissipation Ptot Max:250mW; SMD Marking:6D; Termination Type:SMD; Voltage Vcbo:50V
Manufacturer Aliases
NXP Semiconductors has several brands around the world that distributors may use as alternate names. NXP Semiconductors may also be known as the following names:
- NXP
- PHILIPS
- PHIL
- PHI
- PHILLIPS
- NXP USA Inc
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- Philips Semiconductor
- NXP/PHILIPS
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- PHILIPS ECG
- NXP / Freescale
- PHILL
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23
Number of Pins3
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage700 mV
Collector Emitter Voltage (VCEO)45 V
Current500 mA
Emitter Base Voltage (VEBO)5 V
Gain Bandwidth Product100 MHz
hFE Min100
Max Collector Current500 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation250 mW
TerminationSMD/SMT
Transition Frequency100 MHz
Voltage45 V
Dimensions
Height1.1 mm