onsemi BC557

Bulk Through Hole PNP Single Bipolar (BJT) Transistor 110 @ 2mA 5V 100mA 500mW 150MHz
Obsolete

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Weight200 mg
Technical
Collector Base Voltage (VCBO)-50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage-250 mV
Collector Emitter Voltage (VCEO)45 V
Current Rating-100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency150 MHz
Gain Bandwidth Product150 MHz
hFE Min110
Max Collector Current100 mA
Max Frequency150 MHz
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Manufacturer Package IdentifierMKT-2A03DREV4
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
PolarityPNP
Power Dissipation500 mW
TerminationThrough Hole
Transition Frequency150 MHz
Voltage Rating (DC)-45 V
Dimensions
Height5.33 mm
Length5.2 mm
Width4.19 mm

Documents

Download datasheets and manufacturer documentation for onsemi BC557.

Fairchild Semiconductor
Datasheet4 pages21 years ago
Technical Drawing1 page15 years ago
onsemi
Datasheet7 pages2 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet4 pages11 years ago
Datasheet0 pages0 years ago
Upverter
Datasheet0 pages0 years ago

Inventory History

3 month trend:
+10.00%

Supply Chain

Lifecycle StatusObsolete (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi BC557.

Related Parts

Descriptions

Descriptions of onsemi BC557 provided by its distributors.

Bulk Through Hole PNP Single Bipolar (BJT) Transistor 110 @ 2mA 5V 100mA 500mW 150MHz
50 V, 100 mA PNP Bipolar Junction Epitaxial Silicon Transistor
TRANS GP BJT PNP 45V 0.1A 3PIN TO-92 - Boxed Product (Development Kits)
PNP EPITAXIAL SILICON TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Bipolar Transistors - BJT PNP -45V -100mA HFE/800
100 mA 45 V PNP Si SMALL SIGNAL TRANSISTOR TO-92
TRANSISTOR, PNP, -45V, TO-92; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 500mW; DC Collector Current: -100mA; DC Current Gain hFE: 110hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): -300mV; Current Ic Continuous a Max: -100mA; Current Ic hFE: 2mA; Device Marking: BC557; Gain Bandwidth ft Min: 150MHz; Gain Bandwidth ft Typ: 150MHz; Hfe Min: 110; Pin Configuration: d; Power Dissipation Ptot Max: 500mW; Termination Type: Through Hole; Voltage Vcbo: 50V; Voltage Vceo PNP: 45V

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor

Technical Specifications

Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Weight200 mg
Technical
Collector Base Voltage (VCBO)-50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage-250 mV
Collector Emitter Voltage (VCEO)45 V
Current Rating-100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency150 MHz
Gain Bandwidth Product150 MHz
hFE Min110
Max Collector Current100 mA
Max Frequency150 MHz
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Manufacturer Package IdentifierMKT-2A03DREV4
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
PolarityPNP
Power Dissipation500 mW
TerminationThrough Hole
Transition Frequency150 MHz
Voltage Rating (DC)-45 V
Dimensions
Height5.33 mm
Length5.2 mm
Width4.19 mm

Documents

Download datasheets and manufacturer documentation for onsemi BC557.

Fairchild Semiconductor
Datasheet4 pages21 years ago
Technical Drawing1 page15 years ago
onsemi
Datasheet7 pages2 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet4 pages11 years ago
Datasheet0 pages0 years ago
Upverter
Datasheet0 pages0 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page11 years ago
Rohs Statement1 page10 years ago
Reach Statement8 pages9 years ago