onsemi BC556B

Bulk Through Hole PNP Single Bipolar (BJT) Transistor 180 @ 2mA 5V 100mA 625mW 150MHz
Obsolete

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageTO-92-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight200 mg
Technical
Collector Base Voltage (VCBO)-80 V
Collector Emitter Breakdown Voltage65 V
Collector Emitter Saturation Voltage-300 mV
Collector Emitter Voltage (VCEO)65 V
Current Rating-100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency150 MHz
Gain Bandwidth Product100 MHz
hFE Min110
Max Breakdown Voltage65 V
Max Collector Current100 mA
Max Frequency280 MHz
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
PolarityPNP
Power Dissipation500 mW
TerminationThrough Hole
Transition Frequency280 MHz
Voltage Rating (DC)-65 V
Dimensions
Height5.33 mm
Length5.2 mm
Width4.19 mm

Documents

Download datasheets and manufacturer documentation for onsemi BC556B.

Fairchild Semiconductor
Datasheet4 pages21 years ago
Datasheet4 pages11 years ago
Technical Drawing1 page15 years ago
onsemi
Datasheet7 pages17 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet7 pages18 years ago

Inventory History

3 month trend:
+21.06%

Alternate Parts

Price @ 1000
$ 0.048
$ 0.075
$ 0.075
Stock
404,729
413,614
413,614
Authorized Distributors
2
3
3
Mount
Through Hole
-
-
Case/Package
TO-92-3
TO-92-3
TO-92-3
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
65 V
65 V
65 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
280 MHz
280 MHz
280 MHz
Collector Emitter Saturation Voltage
-300 mV
-300 mV
-300 mV
hFE Min
110
180
180
Power Dissipation
500 mW
625 mW
625 mW

Supply Chain

Lifecycle StatusObsolete (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi BC556B.

Related Parts

Descriptions

Descriptions of onsemi BC556B provided by its distributors.

Bulk Through Hole PNP Single Bipolar (BJT) Transistor 180 @ 2mA 5V 100mA 625mW 150MHz
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Trans GP BJT PNP 65V 0.1A 3-Pin TO-92 Bulk - Boxed Product (Development Kits)
TRANSISTOR, PNP, TO-92; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:500mW; DC Collector Current:-100mA; DC Current Gain hFE:110; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:300mV; Current Ic Continuous a Max:100mA; Device Marking:BC556B; Gain Bandwidth ft Typ:150MHz; Hfe Min:200; Package / Case:TO-92; Power Dissipation Pd:500mW; Termination Type:Through Hole

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor

Part Number Aliases

This part may be known by these alternate part numbers:

  • BC 556 B
  • BC-556-B
  • BC556B...

Technical Specifications

Physical
Case/PackageTO-92-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight200 mg
Technical
Collector Base Voltage (VCBO)-80 V
Collector Emitter Breakdown Voltage65 V
Collector Emitter Saturation Voltage-300 mV
Collector Emitter Voltage (VCEO)65 V
Current Rating-100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency150 MHz
Gain Bandwidth Product100 MHz
hFE Min110
Max Breakdown Voltage65 V
Max Collector Current100 mA
Max Frequency280 MHz
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
PolarityPNP
Power Dissipation500 mW
TerminationThrough Hole
Transition Frequency280 MHz
Voltage Rating (DC)-65 V
Dimensions
Height5.33 mm
Length5.2 mm
Width4.19 mm

Documents

Download datasheets and manufacturer documentation for onsemi BC556B.

Fairchild Semiconductor
Datasheet4 pages21 years ago
Datasheet4 pages11 years ago
Technical Drawing1 page15 years ago
onsemi
Datasheet7 pages17 years ago
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet7 pages18 years ago

Compliance

Environmental Classification
Lead FreeLead Free
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page12 years ago
Rohs Statement1 page10 years ago