onsemi BC33716BU
Production
In StockTechnical Specifications
Physical
Case/PackageTO-92
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight179 mg
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage700 mV
Collector Emitter Voltage (VCEO)45 V
Current Rating800 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min60
Max Collector Current800 mA
Max Frequency100 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation625 mW
Schedule B8541210080
Transition Frequency100 MHz
Voltage Rating (DC)45 V
Dimensions
Height4.58 mm
Length4.58 mm
Width3.86 mm
Inventory History
3 month trend: -0.82%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for onsemi BC33716BU.
Future Electronics
onsemi
Fairchild Semiconductor
Farnell
TME
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.056
$ 0.062
Stock
685,582
963,532
Authorized Distributors
10
11
Mount
Through Hole
Through Hole
Case/Package
TO-92
TO-92
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
45 V
45 V
Max Collector Current
800 mA
800 mA
Transition Frequency
100 MHz
100 MHz
Collector Emitter Saturation Voltage
700 mV
700 mV
hFE Min
60
100
Power Dissipation
625 mW
625 mW
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi BC33716BU.
Related Parts
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Bulk Through Hole NPN Single Bipolar (BJT) Transistor 250 @ 100mA 1V 100nA 625mW 100MHz
onsemiBC337
Transistor GP BJT NPN 45V 0.8A 3-Pin TO-92 Bulk
onsemiBC33725TA
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Descriptions
Descriptions of onsemi BC33716BU provided by its distributors.
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
BC337 Series 45 V CE Breakdown .8 A NPN Epitaxial Silicon Transistor TO-92
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 Bag
Bipolar Transistors - BJT NPN 45V 800mA HFE/250
General Purpose Transistor, TO-92, NPN, 45V
45V 625mW 800mA 100@100mA1V 100MHz 700mV@500mA50mA NPN +150¡Í@(Tj) TO-92-3 Bipolar Transistors - BJT ROHS
TRANSISTOR, BIPOL, NPN, 45V, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 625mW; DC Collector Current: 800mA; DC Current Gain hFE: 60hFE; Tr
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: -0.82%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-92
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight179 mg
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage700 mV
Collector Emitter Voltage (VCEO)45 V
Current Rating800 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min60
Max Collector Current800 mA
Max Frequency100 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation625 mW
Schedule B8541210080
Transition Frequency100 MHz
Voltage Rating (DC)45 V
Dimensions
Height4.58 mm
Length4.58 mm
Width3.86 mm
Documents
Download datasheets and manufacturer documentation for onsemi BC33716BU.
Future Electronics
onsemi
Fairchild Semiconductor
Farnell
TME
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements