Infineon AUIRF2903Z
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AUIRF2903Z | 2,150 | 6h | ||||||||||
| 2156-AUIRF2903Z-ND | 0 | 143 | Bulk | 1d | ||||||||
| 70411553 | 0 | 1 | Bulk | 8h | ||||||||
| AUIRF2903Z | 7,952 | 100 | Bulk | 6d | ||||||||
| AUIRF2903Z | 5,791 | 6d |
Technical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)160 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance1.9 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.32 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation290 W
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance2.4 mΩ
Package Quantity1000
Power Dissipation290 W
Rds On Max2.4 mΩ
Rise Time100 ns
Threshold Voltage2 V
Turn-Off Delay Time48 ns
Turn-On Delay Time24 ns
Dimensions
Height16.51 mm
Length10.66 mm
Width4.82 mm
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 1.95
$ 1.45
Stock
37,703
316,424
Authorized Distributors
3
8
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
160 A
75 A
Threshold Voltage
2 V
4 V
Rds On Max
2.4 mΩ
2.4 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
290 W
290 W
Input Capacitance
6.32 nF
6.32 nF
Engineering Resources
View Evaluation kits and Reference designs for Infineon AUIRF2903Z.
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Descriptions
Descriptions of Infineon AUIRF2903Z provided by its distributors.
Automotive Q101 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 30V 260A Automotive 3-Pin(3+Tab) TO-220AB Tube
HEXFET POWER MOSFET Power Field-Effect Transistor, 160A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)160 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance1.9 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.32 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation290 W
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance2.4 mΩ
Package Quantity1000
Power Dissipation290 W
Rds On Max2.4 mΩ
Rise Time100 ns
Threshold Voltage2 V
Turn-Off Delay Time48 ns
Turn-On Delay Time24 ns
Dimensions
Height16.51 mm
Length10.66 mm
Width4.82 mm
Compliance
Environmental Classification
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements