LOW CURRENT, HIGH PERFORMANCE NPN SILICON BIPOLAR TRANSISTOR RF Small Signal Bipolar Transistor, 0.016A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
RF Bipolar Transistor; Transistor Type:RF Bipolar; Package/Case:SOT-23; Power Dissipation, Pd:150mW; Output Third Order Intercept Point, IP3:20dB; DC Current Gain Min (hfe):11; Leaded Process Compatible:Yes; Noise Figure, Typ:0.9dB ;RoHS Compliant: Yes