Vishay 2N7002E-T1-GE3

2N7002E Series N-Channel 60 V 3 Ohm 0.35 W Surface Mount Mosfet - SOT-23-3
Datasheet

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOT-23-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)240 mA
Drain to Source Breakdown Voltage68 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance21 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation350 mW
Rds On Max3 Ω
Resistance3 Ω
Schedule B8541210080
Threshold Voltage2 V
Turn-Off Delay Time18 ns
Turn-On Delay Time13 ns
Dimensions
Height1.02 mm
Length3.04 mm
Width1.4 mm

Documents

Download datasheets and manufacturer documentation for Vishay 2N7002E-T1-GE3.

_legacy Avnet
Datasheet8 pages11 years ago
Future Electronics
Datasheet5 pages14 years ago
Datasheet5 pages15 years ago
TME
Datasheet8 pages3 years ago
Arrow Electronics
Datasheet8 pages11 years ago

Inventory History

3 month trend:
+57.86%

Alternate Parts

Price @ 1000
$ 0.102
$ 0.17
Stock
1,724,053
1,871,925
Authorized Distributors
10
11
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23-3
SOT-23
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
240 mA
240 mA
Threshold Voltage
2 V
2 V
Rds On Max
3 Ω
3 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
350 mW
350 mW
Input Capacitance
21 pF
21 pF

Engineering Resources

View Evaluation kits and Reference designs for Vishay 2N7002E-T1-GE3.

Related Parts

Descriptions

Descriptions of Vishay 2N7002E-T1-GE3 provided by its distributors.

2N7002E Series N-Channel 60 V 3 Ohm 0.35 W Surface Mount Mosfet - SOT-23-3
Transistor MOSFET N-CH 60V 0.24A 3-Pin TO-236 T/R
N-CHANNEL ENHANCEMENT-MODE MOSFET
MOSFET 60V 240mA 0.35W 3.0ohm @ 10V
Small Signal Field-Effect Transistor, 0.24A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • Vishay Intertech
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Part Number Aliases

This part may be known by these alternate part numbers:

  • 2N7002ET1GE3

Technical Specifications

Physical
Case/PackageSOT-23-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)240 mA
Drain to Source Breakdown Voltage68 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance21 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation350 mW
Rds On Max3 Ω
Resistance3 Ω
Schedule B8541210080
Threshold Voltage2 V
Turn-Off Delay Time18 ns
Turn-On Delay Time13 ns
Dimensions
Height1.02 mm
Length3.04 mm
Width1.4 mm

Documents

Download datasheets and manufacturer documentation for Vishay 2N7002E-T1-GE3.

_legacy Avnet
Datasheet8 pages11 years ago
Future Electronics
Datasheet5 pages14 years ago
Datasheet5 pages15 years ago
TME
Datasheet8 pages3 years ago
Arrow Electronics
Datasheet8 pages11 years ago

Compliance

Environmental Classification
Lead FreeLead Free
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago