Vishay 2N7002-T1-E3

VISHAY - 2N7002-T1-E3 - MOSFET Transistor, N Channel, 115 mA, 60 V, 7.5 ohm, 10 V, 2.1 V

Price and Stock

Distributor		SKU		MOQ	Pkg
Mouser		781-2N7002-T1-E3	579,006	1	Tape & Reel	0.460	0.396	0.217	0.165	0.165	12h
Avnet		2N7002-T1-E3	33,000	3K						0.094	5d
Verical	3	2N7002-T1-E3	12,000	3K						0.110	13m
Arrow Electronics		2N7002-T1-E3	3,000	1	Cut Tape	0.459	0.347	0.217	0.165	0.165	13m
DigiKey	2	2N7002-T1-E3CT-ND	423	1	Cut Tape	0.620	0.529	0.368	0.233	0.233	12h

Technical Specifications

Physical

Case/PackageSOT-23

Contact PlatingTin

MountSurface Mount

Number of Pins3

Weight1.437803 g

Technical

Continuous Drain Current (ID)115 mA

Current15 A

Drain to Source Breakdown Voltage60 V

Drain to Source Resistance7.5 Ω

Drain to Source Voltage (Vdss)60 V

Element ConfigurationSingle

Gate to Source Voltage (Vgs)20 V

Input Capacitance50 pF

Max Junction Temperature (Tj)150 °C

Max Operating Temperature150 °C

Max Power Dissipation200 mW

Min Operating Temperature-55 °C

Nominal Vgs2.1 V

Number of Channels1

Number of Elements1

PackagingCut Tape

Power Dissipation200 mW

Rds On Max7.5 Ω

Resistance7.5 Ω

Schedule B8541210080

Threshold Voltage2.1 V

Turn-Off Delay Time11 ns

Turn-On Delay Time7 ns

Voltage60 V

Dimensions

Height1.02 mm

Length3.04 mm

Width1.4 mm

Inventory History

3 month trend: -5.46%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Documents

Download datasheets and manufacturer documentation for Vishay 2N7002-T1-E3.

Newark

Datasheet6 pages14 years ago

Datasheet6 pages18 years ago

Farnell

Datasheet6 pages15 years ago

Upverter

Technical Drawing10 pages4 years ago

Garrett

Datasheet2 pages17 years ago

Inventory History

3 month trend:

-5.46%

Alternate Parts

This Part

Alternate Parts

Vishay2N7002-T1-E3

onsemi2N7002LT1G

Price @ 1000

$ 0.165

$ 0.049

Stock

3,679,216

32,235,266

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23

SOT-23-3

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

115 mA

Threshold Voltage

2.1 V

1 V

Rds On Max

7.5 Ω

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

200 mW

225 mW

Input Capacitance

50 pF

Engineering Resources

View Evaluation kits and Reference designs for Vishay 2N7002-T1-E3.

Related Parts

Descriptions

Descriptions of Vishay 2N7002-T1-E3 provided by its distributors.

VISHAY - 2N7002-T1-E3 - MOSFET Transistor, N Channel, 115 mA, 60 V, 7.5 ohm, 10 V, 2.1 V

ASIA Components

Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R / MOSFET N-CH 60V 115MA SOT23

Win Source

2N7002 Series N-Channel 60 V 7.5 Ohms Surface Mount Power Mosfet - SOT-23

Future Electronics

N-CHANNEL ENHANCEMENT-MODE MOS FET Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

ComSIT Distribution GmbH

N Channel Mosfet, 60V, 115Ma To-236, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:115Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:200Mw Rohs Compliant: No |Vishay 2N7002-T1-E3.

Newark

MOSFET,N CH,60V,0.115A,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.1V; Power Dissipation Pd:200mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:115mA; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; Gfs Min:80mA/V; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:200mW; Power Dissipation Pd:200mW; Pulse Current Idm:800mA; SMD Marking:72; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:2.1V; Voltage Vgs Rds on Measurement:10V

element14 APAC