onsemi 2N7002

N-Channel MOSFET, Enhancement Mode, 60V, 0.115A, 7.5Ω
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)115 mA
Current115 mA
Current Rating115 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance50 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Nominal Vgs2.1 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation200 mW
Rds On Max7.5 Ω
Resistance5.3 Ω
Schedule B8541210080
Threshold Voltage2.1 V
Turn-Off Delay Time20 ns
Turn-On Delay Time20 ns
Voltage60 V
Voltage Rating (DC)60 V
Dimensions
Height930 µm
Length2.92 mm
Width3.05 mm

Documents

Download datasheets and manufacturer documentation for onsemi 2N7002.

Upverter
Datasheet8 pages7 years ago
Datasheet7 pages0 years ago
Technical Drawing1 page4 years ago
TME
Datasheet0 pages0 years ago
Datasheet11 pages1 year ago
Datasheet5 pages10 years ago
onsemi
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
Fairchild Semiconductor
Technical Drawing1 page12 years ago
Newark
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
element14 APAC
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago

Inventory History

3 month trend:
+39.83%

Alternate Parts

Price @ 1000
$ 0.131
$ 0.049
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$ 0.043
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Stock
5,582,687
52,980,765
74,208,170
18,302,785
53,324,596
1,952,435
15,515,140
2,032,853
23,786,226
1,193,864
Authorized Distributors
10
10
11
13
16
13
6
11
6
10
Mount
Surface Mount
-
Surface Mount
Surface Mount
-
Surface Mount
-
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23-3
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23-3
SOT-23
SOT-23
D2PAK
Drain to Source Voltage (Vdss)
60 V
60 V
60 V
60 V
60 V
60 V
-
-
60 V
60 V
Continuous Drain Current (ID)
115 mA
115 mA
115 mA
115 mA
300 mA
115 mA
115 mA
210 mA
115 mA
115 mA
Threshold Voltage
2.1 V
1 V
2.5 V
2.5 V
-
2.1 V
1 V
-
1 V
-
Rds On Max
7.5 Ω
7.5 Ω
7.5 Ω
7.5 Ω
-
7.5 Ω
7.5 Ω
-
7.5 Ω
7.5 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
20 V
-
20 V
20 V
20 V
20 V
20 V
Power Dissipation
200 mW
225 mW
300 mW
-
-
200 mW
300 mW
540 mW
200 mW
200 mW
Input Capacitance
50 pF
50 pF
50 pF
50 pF
-
50 pF
50 pF
-
50 pF
50 pF

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi 2N7002.

Related Parts

Descriptions

Descriptions of onsemi 2N7002 provided by its distributors.

N-Channel MOSFET, Enhancement Mode, 60V, 0.115A, 7.5Ω
N-Channel 60 V 7.5 Ohm SMT Enhancement Mode Field Effect Transistor SOT-23
Transistor MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R
MOSFET, N, 60V, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 115mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V; Power Dissip
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 115 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 7.5 / Gate-Source Voltage V = 20 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 200
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON SEMICONDUTOR
  • ON Semiconductor Inc.
  • onsemiconductor

Part Number Aliases

This part may be known by these alternate part numbers:

  • 2N7002.
  • 2N7002..

Technical Specifications

Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)115 mA
Current115 mA
Current Rating115 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance50 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Nominal Vgs2.1 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation200 mW
Rds On Max7.5 Ω
Resistance5.3 Ω
Schedule B8541210080
Threshold Voltage2.1 V
Turn-Off Delay Time20 ns
Turn-On Delay Time20 ns
Voltage60 V
Voltage Rating (DC)60 V
Dimensions
Height930 µm
Length2.92 mm
Width3.05 mm

Documents

Download datasheets and manufacturer documentation for onsemi 2N7002.

Upverter
Datasheet8 pages7 years ago
Datasheet7 pages0 years ago
Technical Drawing1 page4 years ago
TME
Datasheet0 pages0 years ago
Datasheet11 pages1 year ago
Datasheet5 pages10 years ago
onsemi
Datasheet0 pages0 years ago
Farnell
Datasheet0 pages0 years ago
Fairchild Semiconductor
Technical Drawing1 page12 years ago
Newark
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
element14 APAC
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement3 pages10 years ago
Materials Sheet3 pages10 years ago
Reach Statement3 pages9 years ago
Materials Sheet3 pages9 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page11 years ago
Rohs Statement1 page10 years ago