onsemi 2N7000
Production
Technical Specifications
Physical
Case/PackageTO-92
Contact PlatingCopper, Silver, Tin
MountThrough Hole
Number of Pins3
Weight201 mg
Technical
Continuous Drain Current (ID)200 mA
Current Rating200 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance40 pF
Max Operating Temperature150 °C
Max Power Dissipation400 mW
Min Operating Temperature-55 °C
Nominal Vgs2.1 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation400 mW
Rds On Max5 Ω
Resistance5 Ω
Schedule B8541210080
Threshold Voltage2.1 V
Turn-Off Delay Time10 ns
Voltage Rating (DC)60 V
Dimensions
Height5.2 mm
Length4.8 mm
Width4.19 mm
Inventory History
3 month trend: +13.93%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for onsemi 2N7000.
Newark
Fairchild Semiconductor
Jameco
RS (Formerly Allied Electronics)
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.107
$ 0.119
Stock
914,128
427,932
Authorized Distributors
10
8
Mount
Through Hole
-
Case/Package
TO-92
-
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
200 mA
200 mA
Threshold Voltage
2.1 V
-
Rds On Max
5 Ω
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
400 mW
400 mW
Input Capacitance
40 pF
-
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi 2N7000.
Related Parts
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N-Channel 60 V 5 Ohm Enhancement Mode Field Effect Transistor - TO-92
onsemiBS170
Transistor BS170 MOSFET N-Channel 60 Volt 0.5 Amp TO-92
Descriptions
Descriptions of onsemi 2N7000 provided by its distributors.
Transistor MOSFET N Channel 60 Volt 0.2 Amp 3 Pin TO-92 Bulk
ON SEMICONDUCTOR - 2N7000 - MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
N-Channel MOSFET, Enhancement Mode, 60V, 200mA, 5 Ω
N-Channel 60 V 5 Ohm Enhancement Mode Field Effect Transistor-TO-92-3
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
Mosfet, N-Ch, 60V, 0.2A, To-226Aa; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:200Ma; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V Rohs Compliant: Yes |Onsemi 2N7000.
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +13.93%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-92
Contact PlatingCopper, Silver, Tin
MountThrough Hole
Number of Pins3
Weight201 mg
Technical
Continuous Drain Current (ID)200 mA
Current Rating200 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance40 pF
Max Operating Temperature150 °C
Max Power Dissipation400 mW
Min Operating Temperature-55 °C
Nominal Vgs2.1 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation400 mW
Rds On Max5 Ω
Resistance5 Ω
Schedule B8541210080
Threshold Voltage2.1 V
Turn-Off Delay Time10 ns
Voltage Rating (DC)60 V
Dimensions
Height5.2 mm
Length4.8 mm
Width4.19 mm
Documents
Download datasheets and manufacturer documentation for onsemi 2N7000.
Newark
Fairchild Semiconductor
Jameco
RS (Formerly Allied Electronics)
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements