onsemi 2N3819
Obsolete
Technical Specifications
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Weight201 mg
Technical
Breakdown Voltage25 V
Continuous Drain Current (ID)50 mA
Current Rating50 mA
Drain to Source Breakdown Voltage25 V
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)-25 V
Input Capacitance8 pF
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-65 °C
Number of Channels1
PackagingBulk
Power Dissipation350 mW
TerminationThrough Hole
Voltage Rating25 V
Voltage Rating (DC)25 V
Dimensions
Height5.33 mm
Length5.2 mm
Width4.19 mm
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for onsemi 2N3819.
onsemi
Farnell
Fairchild Semiconductor
iiiC
Supply Chain
Lifecycle StatusObsolete (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi 2N3819.
Descriptions
Descriptions of onsemi 2N3819 provided by its distributors.
Bulk Through Hole N-Channel JFET Single RF Mosfet 20mA 350mW 25V 8pF
N-CHANNEL RF AMPLIFIER RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92
TRANSISTOR, JFET N TO-92; Breakdown Voltage Vbr: 25V; Zero Gate Voltage Drain Current Idss Min: 20mA; Zero Gate Voltage Drain Current Idss Max: -; Gate-Source Cutoff Voltage Vgs(off) Max: 8V; Transistor Case Style: TO-92; Tra
RF JFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:20mA; Power Dissipation, Pd:0.350W; Package/Case:TO-92; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Breakdown Voltage, V(br)gss:25V ;RoHS Compliant: Yes
TRANSISTOR, JFET N TO-92; Gate-Source Cutoff Voltage Vgs(off) Max:8V; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Application Code:GPA; Current Idss Max:20mA; Current Idss Min:2mA; Current Ig:10mA; Device Marking:2N3819; Drain Source Voltage Vds:25V; Forward Transconductance Gfs Max:6.5mA/V; Full Power Rating Temperature:25°C; Gfs Min:2mA/V; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:k; Power Dissipation Ptot Max:200mW; Termination Type:Through Hole; Transistor Polarity:N Channel
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Weight201 mg
Technical
Breakdown Voltage25 V
Continuous Drain Current (ID)50 mA
Current Rating50 mA
Drain to Source Breakdown Voltage25 V
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)-25 V
Input Capacitance8 pF
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-65 °C
Number of Channels1
PackagingBulk
Power Dissipation350 mW
TerminationThrough Hole
Voltage Rating25 V
Voltage Rating (DC)25 V
Dimensions
Height5.33 mm
Length5.2 mm
Width4.19 mm
Documents
Download datasheets and manufacturer documentation for onsemi 2N3819.
onsemi
Farnell
Fairchild Semiconductor
iiiC
Compliance
Environmental Classification
Lead FreeLead Free
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements