STMicroelectronics 2N3055...
Technical Specifications
Physical
Case/PackageTO-3
MountChassis Mount, Through Hole
Number of Pins2
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)60 V
Current15 A
Current Rating15 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)7 V
Gain Bandwidth Product3 MHz
hFE Min20
Max Breakdown Voltage100 V
Max Collector Current15 A
Max Operating Temperature200 °C
Max Power Dissipation115 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation115 W
Transition Frequency3 MHz
Voltage60 V
Voltage Rating (DC)60 V
Dimensions
Height8.7 mm
Length39.5 mm
Width26.2 mm
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for STMicroelectronics 2N3055....
element14
Upverter
element14 APAC
Future Electronics
iiiC
TME
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 2.225
Stock
52,335
302,859
Authorized Distributors
0
5
Mount
Chassis Mount, Through Hole
-
Case/Package
TO-3
TO-204-3
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
60 V
60 V
Max Collector Current
15 A
15 A
Transition Frequency
3 MHz
2.5 MHz
Collector Emitter Saturation Voltage
1 V
3 V
hFE Min
20
20
Power Dissipation
115 W
115 W
Engineering Resources
View Evaluation kits and Reference designs for STMicroelectronics 2N3055....
Descriptions
Descriptions of STMicroelectronics 2N3055... provided by its distributors.
Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
STMICROELECTRONICS 2N3055 Bipolar (BJT) Single Transistor, NPN, 60 V, 3 MHz, 115 W, 15 A, 70 hFE
TRANSISTOR, POWER; NPN; 60VCE; 100VCB; 7VEB; 15A ICC; 7A IB; 115 W
Trans GP BJT NPN 60V 15A 115000mW 3-Pin(2+Tab) TO-3 Bag
Transistor NPN 2N3055 SGS THOMSON RoHS Ampere=15 V=60 TO3
Halfin
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:60V; DC Current Gain Min (hfe):20; Package/Case:TO-3; Collector Current @ hfe:4A; DC Collector Current:15A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-3
MountChassis Mount, Through Hole
Number of Pins2
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)60 V
Current15 A
Current Rating15 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)7 V
Gain Bandwidth Product3 MHz
hFE Min20
Max Breakdown Voltage100 V
Max Collector Current15 A
Max Operating Temperature200 °C
Max Power Dissipation115 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation115 W
Transition Frequency3 MHz
Voltage60 V
Voltage Rating (DC)60 V
Dimensions
Height8.7 mm
Length39.5 mm
Width26.2 mm
Documents
Download datasheets and manufacturer documentation for STMicroelectronics 2N3055....
element14
Upverter
element14 APAC
Future Electronics
iiiC
TME
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant