STMicroelectronics 2N2907A

STMICROELECTRONICS 2N2907A Bipolar (BJT) Single Transistor, PNP, -60 V, 200 MHz, 400 mW, -600 mA, 300 hFE

PNP transistor BIPOLAR BJT, 2N2907A 0.6A

2N2907A Series PNP 60 V 0.6 A Through Hole Small Signal Transistor - TO-18

Trans GP BJT PNP 60V 0.6A 3-Pin TO-18 Bag

Transistor PNP 2N2907A THOMSON miliampere=600 V=60 TO18

TRANSISTOR; PNP; -60V; -60V; -5V; -0.6A;

Bipolar Transistor, Pnp, -60V To-18; Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:-60V; Transition Frequency Ft:200Mhz; Power Dissipation Pd:400Mw; Dc Collector Current:-600Ma; Dc Current Gain Hfe:300Hfe; Msl:- Rohs Compliant: Yes

TRANSISTOR, PNP,-60V, TO-18; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -60V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 400mW; DC Collector Current: -600mA; DC Current Gain hFE: 300hFE; Transistor Case Style: TO-18; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): -400mV; Continuous Collector Current Ic Max: -600mA; Current Ic @ Vce Sat: 150mA; Current Ic Continuous a Max: -600mA; Current Ic Fall Time Measurement: 150mA; Current Ic hFE: 150mA; Fall Time @ Ic: 30ns; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 200MHz; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 100; No. of Transistors: 1; Pin Configuration: a; Power Dissipation Ptot Max: 400mW; Voltage Vcbo: 60V