STMicroelectronics 2N2905A
Technical Specifications
Physical
Case/PackageTO-39
MountThrough Hole
Number of Pins3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)-60 V
Collector Emitter Breakdown Voltage-60 V
Collector Emitter Saturation Voltage-1.6 V
Collector Emitter Voltage (VCEO)-60 V
Current Rating-600 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency200 MHz
Gain Bandwidth Product200 MHz
hFE Min50
Max Collector Current-600 mA
Max Frequency200 MHz
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation600 mW
Manufacturer Package IdentifierTO39-P008B
Min Operating Temperature-65 °C
Number of Elements1
PolarityPNP
Power Dissipation600 mW
Transition Frequency200 MHz
Voltage Rating (DC)-60 V
Dimensions
Diameter9.4 mm
Height6.6 mm
Length9.4 mm
Width9.4 mm
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for STMicroelectronics 2N2905A.
TME
Nu Horizons
Upverter
element14 APAC
iiiC
Halfin
B+D Enterprises
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 10.74
Stock
68,152
8,644
Authorized Distributors
0
7
Mount
Through Hole
Through Hole
Case/Package
TO-39
TO-39
Polarity
PNP
PNP
Collector Emitter Breakdown Voltage
-60 V
60 V
Max Collector Current
-600 mA
600 mA
Transition Frequency
200 MHz
-
Collector Emitter Saturation Voltage
-1.6 V
1.6 V
hFE Min
50
100
Power Dissipation
600 mW
600 mW
Engineering Resources
View Evaluation kits and Reference designs for STMicroelectronics 2N2905A.
Related Parts
MicrochipJANTX2N2905A
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39
Microchip2N2905
Trans GP BJT PNP 40V 0.6A 600mW 3-Pin TO-39 Bag
Microchip2N4033
Bulk Through Hole PNP 1 Bipolar (BJT) Transistor 100 @ 100mA 5V 1A 800mW 80V
Descriptions
Descriptions of STMicroelectronics 2N2905A provided by its distributors.
PNP TRANSISTOR; TO-39; -60VCE; -60VBE; -5VEB; -0.6A ICC; 0.6W; +175C
2N2905A Series PNP 60 V 600 mA 0.6 W Through Hole Switching Transistor - TO-39-3
Transistor PNP 2N2905A SESCOSEM miliampere:600 V:60 TO39
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:40V; DC Current Gain Min (hfe):40; Package/Case:TO-39; Collector Current @ hfe:1.5A; DC Collector Current:0.6A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
TRANSISTOR, PNP, TO-39; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:600mW; DC Collector Current:600mA; DC Current Gain hFE:120; Transistor Case Style:TO-39; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:400mV; Continuous Collector Current Ic Max:600mA; Current Ic @ Vce Sat:150mA; Current Ic Continuous a Max:600mA; Current Ic Fall Time Measurement:150mA; Current Ic hFE:150mA; Fall Time @ Ic:30ns; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:200MHz; Gain Bandwidth ft Typ:200MHz; Hfe Min:100; No. of Transistors:1; Package / Case:TO-39; Power Dissipation Pd:600mW; Power Dissipation Ptot Max:600mW; Termination Type:Through Hole; Voltage Vcbo:60V
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-39
MountThrough Hole
Number of Pins3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)-60 V
Collector Emitter Breakdown Voltage-60 V
Collector Emitter Saturation Voltage-1.6 V
Collector Emitter Voltage (VCEO)-60 V
Current Rating-600 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency200 MHz
Gain Bandwidth Product200 MHz
hFE Min50
Max Collector Current-600 mA
Max Frequency200 MHz
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation600 mW
Manufacturer Package IdentifierTO39-P008B
Min Operating Temperature-65 °C
Number of Elements1
PolarityPNP
Power Dissipation600 mW
Transition Frequency200 MHz
Voltage Rating (DC)-60 V
Dimensions
Diameter9.4 mm
Height6.6 mm
Length9.4 mm
Width9.4 mm
Documents
Download datasheets and manufacturer documentation for STMicroelectronics 2N2905A.
TME
Nu Horizons
Upverter
element14 APAC
iiiC
Halfin
B+D Enterprises
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant