Infineon IRFB4110PBF

Name: Infineon IRFB4110PBF
Brand: Infineon
SKU: IRFB4110PBF
Price: 4.34 USD
Availability: InStock

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 3.7 Milliohms; ID 180A; TO-220AB; PD 370W

Production

Manufacturer Page Datasheet

Price and Stock

Distributor		SKU		MOQ	Pkg
Mouser		942-IRFB4110PBF	15,034	1	Tube	4.340	4.030	2.900	2.200	2.090	14h
Rochester Electronics		IRFB4110PBF	530			2.360	2.360	2.220	2.010	2.010	21h
Avnet	2	73K8209	810	1		4.510	3.800	3.070	3.070	3.070	4d
Arrow Electronics	3	IRFB4110PBF	5,238	1		3.549	3.285	2.283	1.945	1.880	16h
Verical	4	IRFB4110PBF	1,876	7			4.538	2.200	1.813	1.813	2h

Technical Specifications

Physical

Case/PackageTO-220AB

Contact PlatingTin

MountThrough Hole

Number of Pins3

Technical

Continuous Drain Current (ID)180 A

Current Rating180 A

Drain to Source Breakdown Voltage100 V

Drain to Source Resistance4.5 mΩ

Drain to Source Voltage (Vdss)100 V

Dual Supply Voltage100 V

Element ConfigurationSingle

Fall Time88 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance9.62 nF

Max Junction Temperature (Tj)175 °C

Max Operating Temperature175 °C

Max Power Dissipation370 W

Min Operating Temperature-55 °C

Nominal Vgs4 V

Number of Elements1

On-State Resistance4.5 mΩ

Package Quantity1000

PackagingBulk

Power Dissipation370 W

Rds On Max4.5 mΩ

Recovery Time75 ns

Rise Time67 ns

Schedule B8541290080

TerminationThrough Hole

Threshold Voltage4 V

Turn-Off Delay Time78 ns

Turn-On Delay Time25 ns

Voltage Rating (DC)100 V

Dimensions

Height16.51 mm

Length10.66 mm

Width4.826 mm

Inventory History

Inventory history trend unavailable

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Documents

Download datasheets and manufacturer documentation for Infineon IRFB4110PBF.

Newark

Datasheet0 pages0 years ago

Datasheet8 pages16 years ago

Datasheet8 pages12 years ago

iiiC

Datasheet8 pages12 years ago

Datasheet8 pages16 years ago

SOS electronic

Datasheet8 pages16 years ago

RS (Formerly Allied Electronics)

Datasheet3 pages16 years ago

Jameco

Datasheet9 pages15 years ago

DigiKey

Datasheet9 pages18 years ago

Alternate Parts

This Part

Alternate Parts

InfineonIRFB4110PBF

InfineonIRFB4110GPBF

Price @ 1000

$ 2

$ 1.99

Stock

1,839,449

348,917

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

180 A

Threshold Voltage

4 V

Rds On Max

4.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

370 W

Input Capacitance

9.62 nF

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IRFB4110PBF.

Related Parts

Descriptions

Descriptions of Infineon IRFB4110PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 3.7 Milliohms;ID 180A;TO-220AB;PD 370W

RS (Formerly Allied Electronics)

100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Single N-Channel 100 V 4.5 mOhm 210 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

Transistor MOSFET N-Ch. 180A/100V TO220 IRFB 4110 PBF

Rapid Electronics

Trans MOSFET N-CH Si 100V 180A 3-Pin(3+Tab) TO-220AB Tube

Chip One Stop

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 370 W

Distrelec

Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull

Infineon

N Channel Mosfet, 100V, 180A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRFB4110PBF.

Newark